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Engineers have created the first “active matrix” display using a new class of transparent transistors and circuits, a step toward realizing applications such as e-paper, flexible color monitors and “heads-up” displays in car windshields.

The transistors are made of “nanowires,” tiny cylindrical structures that are assembled on glass or thin films of flexible plastic. The researchers used nanowires as small as 20 nanometers - a thousand times thinner than a human hair - to create a display containing organic light emitting diodes, or OLEDS. The OLEDS are devices that rival the brightness of conventional pixels in flat-panel television sets, computer monitors and displays in consumer electronics.

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Bypassing decades-old conventions in making computer chips, Princeton engineers developed a novel way to replace silicon with carbon on large surfaces, clearing the way for new generations of faster, more powerful cell phones, computers and other electronics.

The electronics industry has pushed the capabilities of silicon — the material at the heart of all computer chips — to its limit, and one intriguing replacement has been carbon, said Stephen Chou, professor of electrical engineering. A material called graphene — a single layer of carbon atoms arranged in a honeycomb lattice — could allow electronics to process information and produce radio transmissions 10 times better than silicon-based devices.

Until now, however, switching from silicon to carbon has not been possible because technologists believed they needed graphene material in the same form as the silicon used to make chips: a single crystal of material 8 or 12 inches wide. The largest single-crystal graphene sheets made to date have been no wider than a couple millimeters, not big enough for a single chip. Chou and researchers in his lab realized that a big graphene wafer is not necessary, as long they could place small crystals of graphene only in the active areas of the chip. They developed a novel method to achieve this goal and demonstrated it by making high-performance working graphene transistors. 

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