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A schematic of graphene nanoribbon field-effect transistor with palladium contacts (S,D) on a 10 nm thick insulating silicon dioxide surface (purple). Beneath the Si02 layer is a highly conductive silicon layer (G). Credit: Stanford University.

Stanford chemists have developed a new way to make transistors out of carbon nanoribbons. The devices could someday be integrated into high-performance computer chips to increase their speed and generate less heat, which can damage today’s silicon-based chips when transistors are packed together tightly.

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Stanford chemists have developed a new way to make transistors out of carbon nanoribbons. The devices could someday be integrated into high-performance computer chips to increase their speed and generate less heat, which can damage today’s silicon-based chips when transistors are packed together tightly. For the first time, a research team led by Hongjie Dai, the J. G. Jackson and C. J. Wood Professor of Chemistry, has made transistors called “field-effect transistors”—a critical component of computer chips—with graphene that can operate at room temperature. Graphene is a form of carbon derived from graphite. Other graphene transistors, made with wider nanoribbons or thin films, require much lower temperatures.

“For graphene transistors, previous demonstrations of field-effect transistors were all done at liquid helium temperature, which is 4 Kelvin [-452 Fahrenheit],” said Dai, the lead investigator. His group’s work is described in a paper published online in the May 23 issue of the journal Physical Review Letters.

Continue reading ‘Researchers Develop Method To Create Transistors Out Of Carbon Nanoribbons’ »