Posts tagged ‘transistors’

Carbon nanoribbons could make smaller, speedier computer chips

A schematic of graphene nanoribbon field-effect transistor with palladium contacts (SD) on a 10 nm thick insulating silicon dioxide surface (purple). Beneath the Si02 layer is a highly conductive silicon layer (G). Credit: Stanford University

A schematic of graphene nanoribbon field-effect transistor with palladium contacts (S,D) on a 10 nm thick insulating silicon dioxide surface (purple). Beneath the Si02 layer is a highly conductive silicon layer (G). Credit: Stanford University.

Stanford chemists have developed a new way to make transistors out of carbon nanoribbons. The devices could someday be integrated into high-performance computer chips to increase their speed and generate less heat, which can damage today’s silicon-based chips when transistors are packed together tightly.

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Researchers Develop Method To Create Transistors Out Of Carbon Nanoribbons

Stanford chemists have developed a new way to make transistors out of carbon nanoribbons. The devices could someday be integrated into high-performance computer chips to increase their speed and generate less heat, which can damage today’s silicon-based chips when transistors are packed together tightly. For the first time, a research team led by Hongjie Dai, the J. G. Jackson and C. J. Wood Professor of Chemistry, has made transistors called “field-effect transistors”—a critical component of computer chips—with graphene that can operate at room temperature. Graphene is a form of carbon derived from graphite. Other graphene transistors, made with wider nanoribbons or thin films, require much lower temperatures.

 

“For graphene transistors, previous demonstrations of field-effect transistors were all done at liquid helium temperature, which is 4 Kelvin [-452 Fahrenheit],” said Dai, the lead investigator. His group’s work is described in a paper published online in the May 23 issue of the journal Physical Review Letters.

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Move over, silicon: Advances pave way for powerful carbon-based electronics

 Practical technique shows promise of carbon material called graphene

Bypassing decades-old conventions in making computer chips, Princeton engineers developed a novel way to replace silicon with carbon on large surfaces, clearing the way for new generations of faster, more powerful cell phones, computers and other electronics.

The electronics industry has pushed the capabilities of silicon — the material at the heart of all computer chips — to its limit, and one intriguing replacement has been carbon, said Stephen Chou, professor of electrical engineering. A material called graphene — a single layer of carbon atoms arranged in a honeycomb lattice — could allow electronics to process information and produce radio transmissions 10 times better than silicon-based devices.

Until now, however, switching from silicon to carbon has not been possible because technologists believed they needed graphene material in the same form as the silicon used to make chips: a single crystal of material 8 or 12 inches wide. The largest single-crystal graphene sheets made to date have been no wider than a couple millimeters, not big enough for a single chip. Chou and researchers in his lab realized that a big graphene wafer is not necessary, as long they could place small crystals of graphene only in the active areas of the chip. They developed a novel method to achieve this goal and demonstrated it by making high-performance working graphene transistors. 

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