Develop Advanced Designs For RFID Transponders
The selection of technology greatly impacts the performance and functionality that can be expected from an integrated-circuit UHF RFID transponder.
Faisal Mohd-Yasin, M.B.I. Reaz, Y.K. Teh | ED Online ID #13722 | October 2006
Radio-frequency identification (RFID) transponder design techniques were introduced last month, in the opening installment of this two-part article series. This month more advanced methods will be explored for enhancing the performance of UHF RFID transponders, using four design examples in Germany, the United States, Italy, and Switzerland.
The German group was involved in pioneering work in UHF RFID, developing a variety of efficient circuit design techniques. However, their work required the use of a nonstandard 0.5-µm CMOS process. The US group proposed a low-cost design using Schottky diodes, employing novel data readout circuit and the capability of boosting the data rate to 10 Mb/s. The Italian group focused on low-power consumption and achieved submicrowatt power consumption with their digital module, based on AMI’s 0.5-µm CMOS process. The Swiss group developed their UHF RFID transponder using silicon-on-sapphire (SOS) technology and achieved the farthest detection range.
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